4 color consumer LEDs and one LED as MCU low-power security alarm.8-Gbyte or more SPI user interface microSD cards.I 2Chemical suitable serial user interface.MCU voltage option fixed 3.3 V or changeable from 1.65 V to 3.6 V.STM32G081RBT6 microcontroller with 128 Kbytes of Display memory space and 32 Kbytes of RAM in LQFP64 package deal.Program firmware illustrations are supplied to assess the USB-C technology through various use situations. Both assistance USB PD process and alternate mode features. USB-C Interface 2 is certainly sink just. USB-C interface 1 is usually dual role energy (DRP) and can provide up-to 45 Watts. The USB-C and Strength Delivery daughterboard functions two impartial USB-C ports managed by an STM32G0. The daughterboard and expansion connectors provide an easy way to connect a daughterboard or wrapping board for the consumer's particular applications. The board integrates an ST-LINK/V2-1 as an embedded in-circuit debugger and coder for the STM32 MCU. These features combine to provide very high efficiency power switching.The complete variety of hardware features on the STM32G081B-EVAL Assessment board contains a mom board, a legacy peripheral daughterboard and a USB-C and Strength Shipping daughterboard, which help to assess all peripherals (USB Type-C connector with USB PD, engine control connection, RS232, RS485, Audio DAC, microphone ADC, TFT LCD, IrDA, IR Directed, IR recipient, LDR, MicroSD card, CEC on two HDMI fittings, smart credit card slot, RF Elizabeth2PROM amp Temperatures sensor…), and to develop applications. Additionally, the transistor features a simple gate drive (0 V to 6 V), high switching frequency (> 10 MHz), fast and controllable fall and rise times, reverse current capability, and zero reverse recovery loss. The GS61008P bottom-side cooled GaN-on-silicon power transistor offers low on-resistance, low gate charge, junction-to-case thermal resistance, and high current capabilities for demanding high power applications. Features include 150V, high-side and low-side gate driver, 200 V/ns dV/dt rating, and offers protection functions such as an independent under-voltage lockout (UVLO) for high-side and low-side output stages. The OnSemi NCP51810 high-speed gate driver is designed to meet the requirements of driving E-mode GaN HEMT power switches in half-bridge power topologies. Additional benefits include fast propagation delay of 50 ns max, increased efficiency and allows paralleling, and control of rise and fall time for EMI tuning. One of the major benefits is the evaluation board’s small size with several pins are available to probe the circuit. HS and LS gate drives, as well as SWN are accessible.
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